| PART |
Description |
Maker |
| GS880Z36T-100 GS880Z36T-11I GS880Z36T-100I GS880Z3 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 11 ns, PQFP100
256K X 36 ZBT SRAM, 18 ns, PQFP100 TQFP-100
|
GSI Technology, Inc.
http://
|
| CY7C1354B-166AC CY7C1354B-166AI CY7C1354B-166BZC C |
9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 3.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 2.8 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1356DV25-250BZC CY7C1356DV25-250BZI CY7C1356DV |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID |
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器，流量，通过输出
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
Crystek, Corp.
|
| CY7C1352G-250AXI CY7C1352G CY7C1352G-133AXC CY7C13 |
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| CY7C1353F-66AI CY7C1353F CY7C1353F-100AC CY7C1353F |
4-Mb (256K x 18) Flow-through SRAM with NoBL(TM) Architecture
4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8162Z72CC-150V GS8162Z72CC-150IV GS8162Z72CGC-20 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
